| PART |
Description |
Maker |
| WMS512K8LV-100CME WMS512K8LV-85CME WMS512K8LV-85CM |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613
120ns; 512K x 8 monolithic SRAM, SMD 5962-95613
70ns; 512K x 8 monolithic SRAM, SMD 5962-95613
85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
|
White Electronic Designs
|
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EDI88257CA EDI88257CA/LPA-C |
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时05555ns
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时055555ns
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs Corporation
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| WMS512K8V-15 WMS512K8V-20CI WMS512K8V-20CLIA WMS51 |
From old datasheet system
RECTIFIER SBR DUAL 20A 150V 150A-ifsm 880mV-vf 0.1mA-ir ITO-220AB 50/TUBE
RECTIFIER SBR DUAL 20A 40V 120A-ifsm 530mV-vf 0.5mA-ir TO-220AB 50/TUBE
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Overtravel Plunger Actuator, 2,5 N - 3,61 N [9 oz - 13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO,
FLEX CONNECTOR, 21 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, , TAPE & REEL RoHS Compliant: Yes 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
|
List of Unclassifed Man...
White Electronic Designs
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| 29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F0 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Macronix International Co., Ltd.
|
| EDI88257CA EDI88257CAXCC EDI88257CAXCM EDI88257LPA |
256Kx8 Monolithic SRAM
|
WEDC[White Electronic Designs Corporation]
|
| EDI8833P EDI8833C EDI8833LP |
HIGH SPEED 256K MONOLITHIC SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
